EE496

Homework # 1(due 9/13/02)

9/4/02

 

Problem 1:

Plot the intrinsic carrier concentration in silicon as a function of temperature in the range 200K to 700K. 

 

Problem 2:

Plot the location of the Fermi level in n-doped silicon for impurity concentration in the range: 1013 cm-3 to 1018 cm-3 at room temperature (300K) and ni= 1010 cm-3

 

Problem 3:

Determine the free carrier concentration (n and p) in silicon under the following doping conditions:

  1. Nd = 1016 cm-3, Na = 0 (T=300K)
  2. Nd =0 , Na = 1015 cm-3 (T=300K)
  3. Nd = 1016 cm-3, Na = 9x1015 cm-3 (T=300K)
  4. Nd = 1016 cm-3, Na = 2x 1017 cm-3 (T=500K)

 

Problem 4:

Using the data given in problem 3, Determine and sketch:

1.      the Fermi level location

2.      intrinsic Fermi level.