EE496

Semiconductor Devices

Fall 2002

WHEN & WHERE: Sloan , MWF 1:10 – 2:00

Instructor: Dr. Mohamed A. Osman

EME 227; 335-2301

osman@eecs.wsu.edu

OFFICE HOURS: MW: 2:00 – 3:00, F: 11:10 – 12:00, or by appointment.

TEXT BOOK(s):

· Y. Taur & T.H. Ning, “Fundamentals of Modern VLSI Devices ”, Cambridge University Press 1998.

REFERENCES:

1. R.F. Perret, “Semiconductor Device Fundamentals,” Addison Wesley, 1996

2. B.G. Streetman & S. Banerjee, “Solid State Electronics,” Prentice Hall, 1998.

GRADING:

Three 1 hour Midterm Exams. (10/2,11/6, 12/4) 75%

Home work (may include simulation) 15%

Term paper or project report 10%

Homework Policy:

No late homework accepted.

Exam. Policy:

1. Closed note and book

2. Two pages of notes allowed with NO figures or sketches.

3. Cheating will result in automatic failure of the course and further actions by the School of EECS and WSU.

Term paper Policy:

1. Maximum of 8 pages of double spaced typing including figures. (minimum of 5 page of text).

2. 10 to 15 minute oral presentation.

3. Use and direct copying of copy righted materials from books, journals, or web without proper credit is considered cheating. (see item 3 above).