EE597: RF MOSFET Modeling

Spring 2001

Homework # 2

SPICE LEVEL1 PARAMETER EXTRACTION

(DUE date: Wednesday 2/23/05)

Use the current voltage measurements on NMOSFET device to extract SPICE level1 parameters. Then using the models equations simulate the current voltage for the device and compare it with the measurements.

The measurement data and conditions are inside the EXCEL files.

• idvg.xl : drain current as a function of gate bias at different substrate bias voltages (VWELL).
• Idvd.xl : drain current as a function of drain bias for different gate bias voltages.

The condition are listed in the header above the data. Each sweep with different dc constant conditions is separated out. VWELL = Vbs is the substrate to source voltage. Following are useful information about the measured device:

Device dimensions:

W=50um

L=50um

Tox=370 Ang.

Follow the extraction example in the text book and extract all the parameters. How is the agreement between the measured and simulated I-V characteristics. Comment on the level of agreement and discuss how the agreement can be improved

The data files are located at these two links.