MOHAMED OSMAN

Professor
School of Electrical Engineering and Computer Science
Washington State University
Pullman, WA 99164
(509) 335-
Internet: osman@eecs.wsu.edu

Research

My area's of research include: 1. high temperature electronics: reliability and parameter extraction, SPICE model development, transport in wide band gap semiconductors. 2. Ultrafast optical and electronic processes in semiconductors using Monte Carlo simulation. 3. Molecular dynamic simualtion of the thermal properties of carbon nanotubes, 4. Silicon on insulator MOSFET device modeling and RF circuits.

Teaching Profile

EE 496: Physics of Semiconductor Devices

EE 311: Microelectronics Circuits
EE 574: Optoelectronics
EE 214: Digital Logic Circuits

EE 431: RF Circuit Design

Current Schedule/Office Hours

Publications

A.A. Osman, M.A. Osman, N.S. Dogan, & M.A. Imam. Extended Tanh Law MOSFET Model for High Temperature Circuit Simulation. IEEE Journal of Solid State Circuits (Feb 1995).

A. Osman, "High Temperature Modeling of Partially Depleted SOI MOSFETs," MS Thesis, Washington State University, Pullman, Washington (1994).

C. T. Dikmen, "Modeling and Design of Semiconductor Devices and Integrated Circuits for High Temperature Electronics, Ph.D. Thesis, Washington State University, Pullman, Washington (1994).

C.T. Dikmen, N.S. Dogan, & M.A. Osman. Modeling & Characterization of HBT for High Temperature Applications. IEEE Journal of Solid State Circuits, Vol. 29, 108 (1994).

A.A. Osman, M.A. Osman, N.S. Dogan, & M. Imam. Zero Temperature Coefficient Bias Points of Partially-Depleted SOI MOSFETS. IEEE Transactions in Electron Devices (in review)

A.A. Osman, M.A. Osman, and M. Imam, "Tanh Law MOSFET Model for High Temperature Circuit Simulations. Transactions Second International High Temperature Electronics Conference, Charlotte, North Carolina, June 1994.

C.T. Dikmen, N.S. Dogan, & M.A. Osman. Modeling & Characterization of AlGaAs/GaAs HBTs for High Temperature Applications. Transactions Second International High Temperature Electronics Conference, Charlotte, North Carolina, June 1994.

C.T. Dikmen, N.S. Dogan, & M.A. Osman. Hot-Carrier-Induced Degradation in LDD MOSFETs at High Temperatures. Transactions Second International High Temperature Electronics Conference, Charlotte, North Carolina, June 1994

C.T. Dikmen, N.S. Dogan, & M.A. Osman. High-Temperature Behavior and Modeling of Integrated Circuit Bipolar Junction Transistors. Transactions Second International High Temperature Electronics Conference, Charlotte, North Carolina, June 1994.

C.T. Dikmen, N.S. Dogan, A. Bhattacharyya & M.A. Osman. Hot Carrier Induced Degradation in LDD-MOSFETs at High Temperatures. Solid State Electronics (December 1994).

C.T. Dikmen, N.S. Dogan, A. Bhattacharyya & M.A. Osman. An Enhanced Deep Submicron LDD-MOSFET Model for Analog and Digital VLSI Applications over a Wide Temperature range (27 - 250C). IEEE Transactions in Electron Devices (in review).