Mohamed A. Osman
School of Electrical Engineering and Computer Science
Washington State University; Pullman, WA 99164-2752
osman@eecs.wsu.edu /
(509) 335-2301 / Fax: (509) 335-3818
Education:
BS University of Khartoum, Physics (First Class Honors),
1977.
MS University of Arizona, Physics, 1980.
MS University of
Massachusetts, Electrical & Computer Engineering, 1982.
Thesis advisor:
Professor Ting-Wei Tang
PhD Arizona State University,
Applied Physics, 1986.
Thesis advisor: Professor David K. Ferry
Professional Experience:
8/2003 – Present: Professor: : School of Electrical Engineering &
Computer Science, Washington State University
8/95-7/2003: Associate Professor: School of Electrical Engineering
& Computer Science, Washington State University.
Analytical modeling SOI and bulk MOSFETs, noise and floating body, self-heating effects in SOI MOSFETs, RF SOI and CMOS circuits, High speed phenomena, Transport in semiconductors and Plasma polymerized electro-active polymers, Molecular dynamics simulations of thermal conduction in carbon nanotubes.
6/01 - 8/01 NASA Faculty Fellow: NASA Ames Research Center, Moffett
Field, California. Molecular Dynamics Simulation of the thermal conductivity of
carbon nanotubes and y-junction nanotubes.
7/98 - 8/99 NASA Faculty Fellow: NASA Ames Research Center, Moffett
Field, California. Molecular Dynamics Simulation of the thermal conductivity of
carbon nanotubes and graphite. Simulation and modeling of silicon-on-insulator
MOSFETs, Di-nulei frequency in DNA.
6/97 - 8/97 NASA Visiting Summer Faculty: NASA Ames Research Center,
Moffett Field, California. Monte Carlo Simulation of field emission devices,
Molecular Dynamics Simulation of Carbon nanotubes & graphite.
6/95 - 8/95 NASA Summer Faculty Fellow: NASA Lewis Research Center,
Cleveland, Ohio. Technical assessment of high temperature electronics
requirements for hybrid electric vehicles.
8/89 - 7/95 Assistant Professor, School of Electrical Engineering
& Computer Science, Washington State University. Has taught courses on
semiconductor devices, microelectronics fabrication, semiconductor device
modeling, optoelectronics, electromagnetics, digital design, and VLSI design.
Research work on: minority and majority carrier transport in heavily doped
silicon and GaAs, electron-electron scattering effects in silicon and GaAs,
ultrafast phenomena in compound semiconductors, electron transport in diamond
using Monte Carlo approach, quantum transport, high temperature modeling,
characterization and reliability of HBT and silicon devices & ICs, large
signal modeling of GaAs MESFETs.
5/93 - 6/93: Visiting Scientist,
Walter Schottky Institute, Technical University of Munich, Germany. Research on
parallel device simulation algorithms using cellular automata..
9/86 - 8/89: Research Scientist,
Scientific Research Associates, Inc.; Glastonbury, Connecticut. Research on
modeling of high speed solid state devices such as PHEMT, HBT, PBT, MESFET
using drift and diffusion approach.
Monte Carlo simulation of transport in diamond, InGaAs, GaAs, and InP.
Ultrafast optical and electronic phenomena in semiconductors.
8/84 - 8/86: Research Associate, Center for Solid State
electronics Research; Arizona State University, Tempe, Arizona. Research on
ultrafast relaxation in GaAs, device modeling, and quantum transport in quantum
wells using Wigner formulation.
Service
to Professional Groups/Associations
Organization / Chairperson of Professional Meetings:
·
Member Program
Committee: SPIE Conference on Ultrafast Phenomena in Semiconductors and
Nanostructure Materials, VIII, , San
Jose, California, January 2004
·
Member program Committee IEEE
University/Government/Industry Microelectronics Symposium Boise, Idaho, June 29 -July 2, 2003
·
Member NSF SBIR/STTR Phase I, Carbon Nanotube Panel, April
2002.
·
Member SBIR/STTR Phase
II Semiconductor Materials Review Panel, April 2003
·
SBIR Phase I
Nanoparticle Materials Review Panel March 2003
·
Member Midwest Symposium
Steering Committee, 2003.
·
Member Program
Committee: SPIE Conference on Ultrafast Phenomena in Semiconductors, VII, , San Jose, California, January 2003
·
Member Program
Committee: SPIE Conference on Ultrafast Phenomena in Semiconductors VI, San
Jose, California, January 2002.
·
Member IEEE Electron
Device Society Delegation to the Peoples Republic of China, 9/7 –9/20/2001.
·
Member Program
Committee: SPIE Conference on Ultrafast Phenomena in Semiconductors V, San
Jose, California, January 2001.
·
Member Program
Committee: SPIE Conference on Ultrafast Phenomena in Semiconductors IV, San
Jose, California, January 2000
·
Member Program
Committee: SPIE Conference on Ultrafast Phenomena in Semiconductors III, San
Jose, California, January 1999
·
Member Program
Committee: SPIE Conference on Ultrafast Phenomena in Semiconductors II, San
Jose, California, January 1998.
·
Member Organizing
Committee: Society for Engineering Science 35th Annual Technical
Meeting, Pullman, Washington, September 1998.
·
Chair Organizing
Committee: Symposium on Giga Scale Integration Technology, Pullman, Washington,
September 1998.
·
Member Organizing
Committee: "Second International Symposium on Quantum Confinement: Physics
& Applications", 185th
Electrochemical Society Meeting, San Francisco, California, May 22-27, 1994.
·
Session Chair:
"Second International Symposium on Quantum Confinement: Physics &
Applications", 185th
Electrochemical Society Meeting, San Francisco, California, May 22-27, 1994.
·
Member Advisory Board:
Third International Conference on Computational Electronics, Portland, Oregon,
May 18-20, 1994. 82 technical papers were presented at this meeting.
·
Session Chair, Third
International Conference on Computational Electronics, Portland, Oregon, May
18-20, 1994.
·
Program Co-Chair: Symposium on Industry/University
Interaction, University Tecknologi Malaysia, Kuala Lumpur, Malaysia, April
27-28, 1993
Recognition:
·
NASA Group Achievement
Award: Ames IPT on Devices and
Nanotechnology, 2000.
·
Oustanding Research
Faculty, School of Electrical Engineering, WSU, 2003.
Membership
in Professional Societies:
·
Senior member, Institute
of Electrical and Electronic Engineering: Electron Device Society.
·
Chapter Chair: IEEE ED/AP/SP/CAS Pullman-Moscow Joint
Chapter
·
American Physical
Society: Computational Physics Division, Forum on Education, Forum on
International Physics
·
American Solar Energy
Society
Review of Journal Articles & Proposals:
·
Journal of Applied
Physics, Applied Physics letters, Physical Review B.
·
International Journal of
Microelectronics, IEEE Trans. Electron Devices, Solid State Electronics
·
Semiconductor Science
& Technology, Ozone Science and Engineering
·
NSF & Cornell Center for Supercomputing
·
The United States
Civilian Research and Development Foundation.
·
Battelle Northwest
National Labs.
PUBLICATIONS
a. Books:
1.
"Quantum Confinement: Physics and
Applications" ,M. Cahay, S. bandyopadhyay, J.P. Leburton, A.W.
Kleinsasser, and M.A. Osman, editors, , Proc. Vol. 94-17, The Electrochemical
Society, 1994.
2. “Proceedings of the Symposium on Giga Scale
Integration Technology,” M.A. Osman and O.O. Awadalla, editors, 1999.
b. Journal
Articles:
1.
M.A. Osman, D.H. Navon,
T.W. Tang, and L. Sha, "Improved Design of the Permeable Base
Transistor," IEEE Transaction On Electron Devices , Vol. ED-30 , pp. 1348-1354 (1983).
2.
J.M. Cowley, M.A. Osman,
and P. Humble, "Nanodiffraction from platelet defects in
diamond," Ultramicroscopy , Vol. 15 , pp. 311-318 (1984).
3.
K. Hwang, D.H. Navon,
T-W.Tang, and M.A. Osman, "Improved Convergence of Iterative numerical
device simulation algorithms," IEEE Transaction On Electron Devices , Vol. ED-32 , pp. 1143-1145 (1985).
4.
U. Ravaioli, M.A. Osman,
W. Potz, N. Kluksdhal, and D.K. Ferry, "Investigation of Ballistic
Transport through resonant tunneling quantum wells using Wigner function
approach," Physica , Vol. 134b, pp. 36-40 (1985).
5.
U. Ravaioli, P. Lugli,
M.A. Osman, D.K. Ferry, "Advantages of collocation methods over finite
differences in one dimensional Monte Carlo simulations of submicron
devices," IEEE Transaction On Electron Devices , Vol. ED-32 , pp. 2097-2101 (1985).
6.
M.A. Osman and D.K.
Ferry, "Monte Carlo Investigation of the electron-hole Interaction effects
on the Ultrafast relaxation of hot photoexcited carriers in GaAs," Physical Review B, Vol.
36 , pp. 6018-6032 (1987).
7.
M.A. Osman and D.K.
Ferry, "Electron-hole interaction and high field transport of photoexcited
carriers in GaAs," Journal of Applied Physics, Vol. 61, pp. 5330-5336 (1987).
8.
M.A. Osman and H.L.
Grubin, "Monte Carlo Investigation of Minority Electron Transport in
InGaAs," Applied Physics Letters, Vol. 51 , pp. 1812-1814 (1987).
9.
D.K. Ferry, M.A. Osman,
R. Joshi, and M.J. Kann," Ultrafast relaxation of hot photoexcited
carriers in GaAs," Solid State Electronics , Vol.
31, pp. 401-406 (1988).
10.
W. Potz and M.A. Osman,
"Hot phonons revisited," Solid
State Electronics , Vol. 31, pp.
309-312 (1988).
11.
M.A. Osman and H.L.
Grubin, "Carrier-carrier interaction and intervalley transfer effects on
ultrafast relaxation of photoexcited electrons in GaAs," Solid State Electronics , Vol. 31, pp. 471-474 (1988).
12.
M.A. Osman and H.L. Grubin,
"Effect of carrier-carrier interaction on intervalley transfer rates of
photoexcited carriers in GaAs," Physical Review B , Vol.
39, pp. 10969-10972 (1989).
13.
M.A. Osman and H.L.
Grubin, "Electron Velocity Overshoot and Valley repopulation effects in
diamond," Applied Physics Letters , Vol.
54 , pp. 1902-1904 (1989).
14.
M.A. Osman, M. Cahay,
and H.L. Grubin, "Effect of Valence Band Anisotropy on the Ultrafast
relaxation of Electrons in GaAs", Solid
State Electronics , Vol. 32, pp.
1911-1914 (1989).
15.
M. Cahay, S.
Bandyopadhary, M.A. Osman, and H.L. Grubin, "Influence of Evanescent
States on Quantum Transport Through an Array of Elastic Scatterers," Surface
Science , Vol. 228 , pp. 301-305, 1990.
16.
M.A. Osman,
"Minority Electron Transport across p+ doped Submicron Layers of
GaAs," Journal of Applied Physics,
Vol. 71, pp. 308-313, 1992.
17.
M. Imam, M.A. Osman, and
Y. Prieto, "A large Signal GaAs MESFET Model for Nonlinear Circuit
Simulation," IEEE Microwave and
Guided Wave Letters, Vol. 2, 135 (1992).
18.
M.A. Osman, N. Nintunze,
and M. Imam, "Carrier-carrier interaction effects on Transient Valley
Population and Velocity in Silicon," Semiconductor
Science and Technology, Vol. 7, 340 (1992).
19.
M.A. Osman, "High
Temperature Transport of Electrons in Diamond," Physica B, Vol. 185, 471
(1993).
20.
M. Imam & M.A.
Osman, "Autocorrelation Function of Velocity Fluctuations and Noise in
Diamond," Diamond Films &
Technology Vol. 2, 15 (1993).
21.
M. Imam & M.A.
Osman, "Modeling Threshold Voltage of Short-Channel SOI MOSFETs," Electronic Letters Vol.
29, 474 (1993).
22.
J. Dewey & M.A.
Osman, "Monte Carlo Investigation of Minority Electron Transport in
Silicon", Applied Phys. Lett. , Vol. 62, 182 (1993).
23.
J. Dewey & M.A.
Osman, "Monte Carlo Study of Hole Transport in Silicon," J. Appl. Physics Vol. 74, 3219 (1993).
24.
J. Dewey & M.A.
Osman, "Electron-hole scattering effects on Transient Transport in
Silicon,” Semiconductor Science &
Technology , Vol. 9, 482 (1994).
25.
N. Nintunze & M.A.
Osman, "Dynamically screened electron-hole scattering effects on ultrafast
thermalization of photoexcited carriers in p+ GaAs," Semiconductor Science & Technology ,
Vol. 9, 485 (1994).
26.
N. Nintunze & M.A.
Osman, "Ultrafast relaxation of highly photoexcited carriers in p-doped
and intrinsic GaAs," Phys. Rev. B ,
Vol. 50, pp 10706-10714 (1994).
27.
C.T. Dikmen, N.S. Dogan,
& M.A. Osman, "Modeling and Characterization of HBT for High
Temperature Applications," IEEE
Journal of Solid State Circuits, Vol. 29, 108 (1994).
28.
C.T. Dikmen, N.S. Dogan,
A. Bhattacharyya & M.A. Osman, "Hot Carrier Induced Degradation in
LDD-MOSFETs at High Temperatures,"
Solid State Electronics , Vol.
38, December 1994.
29.
A.A. Osman, M.A. Osman,
N.S. Dogan, and M.A. Imam, "Extended Tanh Law MOSFET Model for High
Temperature Circuit Simulation," IEEE
Journal of Solid State Circuits , Vol.
30, 108-11, February 1995.
30.
A.A. Osman, M.A. Osman,
N.S. Dogan, and M. Imam, "Zero Temperature Coefficient Bias Points of
Partially-Depleted SOI MOSFETS," IEEE Trans. Electron Devices, Vol. 42,
Sept. 1995.
31.
N. Nintunze and M.A.
Osman, "Hole Drift Velocity in Warped Band Model of GaAs," Semiconductor Science & Technology , Vol. 10, 11-17 (1995).
32.
R. Rodrigues, M. Sailor,
P. Buchberger, R.A. Hopfel, N. Nintunze, and M.A. Osman, "Ultrafast energy
loss of electrons in p-GaAs," Applied Physics Letters, Vol. 67, (July 1995).
33.
M.A. Imam, M.A. Osman,
and A.A. Osman, "MOSFET Global Modeling for Deep Submicron Devices with a
Modified BSIM1 Spice Model," IEEE
Trans. Computer Aided Design, vol. 15,
pp. 446-451, 1996.
34.
P.D. Pedrow, K. Goyal,
R. Mahalingam, and M.A. Osman, “Explosion model applied to an intense pulsed
plasma source for thin film deposition,” IEEE
Trans. on Plasma Science, vol. 25,
pp. 89-96, 1997.
35.
M.A. Imam, M.A. Osman,
and A.A. Osman, “Threshold Voltage Model for deep-Submicron Fully Depleted SOI
MOSFETs with Back gate Substrate Induced Surface Potential Effects,” Journal of
Microelectronics Reliability, vol.39 , pp. 487-495 , 1999.
36.
M.A. Imam, H. Fu, M.A.
Osman, and A.A. Osman,”A simple method to determine the floating body voltage
of SOI CMOS devices,” IEEE Electron Dev.
Lett., Vol. 21, pp. 21-23, 2000.
37.
L.V. Shepsis, P.D.
Pedrow, R. Mahalingham, and M.A. Osman, “Modeling and Measurement of Monomer
Pressure Evolution in Inductively Coupled Pulsed Plasma Reactor for Thin
Polymer Films,” IEEE Trans. On Plasma
Science, Vol. 28, pp.
2172-2178 (2000).
38.
M.A. Imam, M.A. Osman,
and A.A. Osman, ”Determination and assessment of the floating body voltage of
SOI CMOS devices,” IEEE Trans. Electron
Dev.,Vol. 48, pp. 688-695, 2001.
39.
M.A. Osman and Deepak
Srivastava, “Temperature Dependence of Thermal Conductivity of Single Wall
Carbon Nanotubes,” Nanotechnology, Vol. 12 No 1, 21-24,
2001.
40.
K.O. Goyal, R.
Mahalingam, P.D. Pedrow and M. A. Osman,"Mass Transport Characteristics in
a Pulsed Plasma Enhanced Chemical Vapor Deposition Reactor for Thin Polymer
Film Deposition," IEEE Transactions on Plasma Science, Vol. 29, No.
1, February 2001.
41.
L.V. Shepsis, P.D.
Pedrow, R. Mahalingham, and M.A. Osman, “Modeling and Experimental Comparison
of Pulsed Plasma Deposition of Aniline,” Thin Solid Films Vol. 385, pp.
11-21, 2001.
42.
A. Daghighi and M.A.
Osman, “Two dimesnional Model for Simulation of Body Contacts in SOI MOSFETs,”
Microelectronics Engineering, Vol. 70, pp. 83-90, 2003.
43.
M.A. Imam, M.A. Osman,
and A.A. Osman, “ Simulation of partially and near-fully depleted SOI MOSFET
Devices and Circuits using SPICE compatible Physical sub-circuit model,”
Microelectronics Reliability, Vol. 44, pp. 53-63 (2004).
44.
P.A. Tamirisa, K.C.
Liddell, P.D. Pedrow, and M.A. Osman,” Pulsed Plasma Polymerized Aniline Thin
Films,” J. Applied Polymer Science VOl. 93, pp. 1317-1325 (2004).
45.
R. Dhar, P.D. Pedrow,
K.C. Liddell, Q. Ming, T.M. Moller, and M.A. Osman, “Plasma Enhanced MOCVD of
Catalytic Coatings for Fuel Reformers,” IEEE Transactions on Plasma Science (accepted).
46.
A. Cummings, M.A. Osman, D. Srivastava,
D. Srivastava and M. Menon, “Thermal Conductivity of Y-Junction carbon naotubes,"
Phys. Rev. B Vol. 70, pp. 115405-115410 (2004).
d. Conference Papers:
1.
M.A. Osman, U. Ravaioli,
and D.K. Ferry, "Monte Carlo simulation of Hot Carriers generated by
subpicosecond Laser Pulses in Schottky Barrier Diodes, "Picosecond Electronics and Optoelectronics ,
G.A. Mourou, D.M. Bloom, and C.H. Lee, Editors, Springer, Berlin (1985).
2.
M.A. Osman, U. Ravaioli,
and D.K. Ferry, "Monte Carlo Investigation of High Speed GaAs Schottky
Barrier Photodiode," High Speed Electronics , B. Kallbak,
Editor, pp. 136-139, Springer, Heidelberg (1986).
3.
H.L. Grubin, M.A. Osman,
and J.P. Kreskovsky, "Ultrashort Transients in Semiconductors,"
Ultrafast Lasers Probe Phenomena in Bulk and Microstructure Semiconductors I,
edited by R.R. Alfano, Proc. SPIE 793, pp. 78-86, 1987. (Invited paper).
4.
M.A. Osman, H.L. Grubin,
J.P. Kreskovsky, and D.K. Ferry, "Monte Carlo Investigation of
Carrier-Carrier Interaction and Ultrafast Cooling of Hot Photoexcited Carriers
in GaAs," Ultrafast Lasers Probe
Phenomena in Bulk and Microstructure Semiconductors I, edited by R.R.
Alfano, Proc. SPIE 793, pp. 78-86, 1987. (Invited paper).
5.
M.A. Osman and H.L.
Grubin, "Electron-Hole Interaction In GaAs," Ultrafast Lasers Probe Phenomena in Bulk and Microstructure
Semiconductors II, edited by R.R. Alfano, Proc. SPIE 942, pp. 18-29, 1988.
(Invited paper).
6.
M. Cahay, M.A. Osman,
H.L. Grubin, and M. Mclennan, "Space Charge Effects in the compositional
and effective mass superlattices", Nanostructure
Physics and Fabrication , M.A. Reed and W.P. Kirk, Editors, pp. 495-499,
Academic Press, San Diego (1989).
7.
M.A. Osman and M. Cahay,
"Effect of hot phonons on the on the ultrafast relaxation of photoexcited
holes in semiconductors," Ultrafast Laser Probe Phenomena in Bulk and
Microstructure Semiconductors III , R.R. Alfano, Editor, published by SPIE,
Bellingham, Washington; 22-28 (1990).
8.
MA. Osman and N.
Nintunze, "Momentum reorientation of photoexcited carriers in GaAs,"
in Ultrafast Phenomena in Semiconductors, D.K. Ferry & H.M.
van Driel, Editors, Proc. SPIE 2142, pp. 270-277, 1994.
9.
N. Nintunze and M.A.
Osman, "Femtosecond Relaxation of highly photoexcited carriers in
GaAs," in Ultrafast Phenomena in
Semiconductors, D.K. Ferry & H.M. van Driel, Editors, Proc. SPIE
2142, pp. 286-293, 1994.
10.
T. Singh, G. Qian, M.
Cahay, and M.A. Osman, "Spatial Distribution of Current and Fermi Levels
in Electron Wave Directional Couplers," in "Quantum Confinement: Physics and Applications", M. Cahay, S.
Bandyopadhyay, J.P. Leburton, A.W. Kleinsasser, and M.A. Osman, Editors, Proc.
Vol. 94-17, pp. 104-116, The Electrochemical Society, 1994.
11.
Kumar, M. Cahay, S. Shi,
K. Roenker, W.E. Stanchina, and M.A. Osman, "Tunneling Time through
Emitter-base Junctions in Heterojunction Bipolar Transistors," in "Quantum Confinement: Physics and
Applications" , M. Cahay, S.
Bandyopadhyay, J.P. Leburton, A.W. Kleinsasser, and M.A. Osman, Editors, Proc.
Vol. 94-17, pp. 341-353, The Electrochemical Society, 1994.
12.
M.A. Osman, U. Ravaioli,
R. Joshi, W. Potz, and D.K. Ferry, "Monte Carlo Simulation of the
Electron-hole Interaction Effects On the Relaxation of Hot Photoexcited
Carriers," Proceedings of the 18th International Conference on the Physics of
Semiconductors , O. Engstrom, Editor, pp. 1311- World Scientific, Singapore
(1987).
13.
M.A. Osman and H.L.
Grubin , "Minority Electron Transport in InP", First International Conference on InP and Related Materials for
Advanced Electronic and Optical Devices , R. Singh, L.J. Messick, Editors,
Proc. SPIE 1144, 626 (1989).
14.
M. Meyyappan, M.A.
Osman, G. Andrews, "Physics of InP/InGaAs Heterostructure Bipolar
transistors for EHF applications", First
International Conference on InP and Related Materials for Advanced Electronic
and Optical Devices , R. Singh, L.J. Messick, Editors, Proc. SPIE 1144, 602
(1989).
15.
N.S. Dogan, M. WU, M.A.
Osman, and R.G. Olsen, "Modeling of propagation and cross-talk in
interconnects using SPICE," Proceedings
of the 33rd Midwest Symposium on Circuits and Systems, Calgary, Canada,
August 1990.
16.
M.A. Osman, M. Imam, and
N. Nintunze, "Diffusion coefficient of electrons in Diamond," Applications of Diamond Films and Related
Materials, Y. Tzeng, M. Yoshikawa, editors, Elsevier, NewYork, pp. 611-614
(1991).
17.
M.A. Osman and N.S.
Dogan, "Minority Electron Transport Across Submicron layers of GaAs and
InP'", Computational Electronics: Semiconductor Transport and Device
Simulation, K. Hess, J.P. Leburton, and U. Ravaioli, editors, Kluwer
Academic Publishers, Boston, 107-110 (1991).
18.
M.A. Osman,
"Electron-electron interaction effects on transient transport in
silicon", Proceeding of the
International Workshop on Computational Electronics, pp. 217-220
(1992).
19.
J. Dewey and M.A. Osman,
"Monte Carlo Investigation of Minority electron transport in
Silicon," Proceeding of the
International Workshop on Computational Electronics, pp. 225-228
(1992).
20.
J. Dewey and M.A. Osman,
"Electron-hole scattering effects in Silicon," Proceeding of the
International Workshop on Computational Electronics, University of Leeds,pp.
200-204 (1993).
21.
J. Dewey and M.A. Osman,
"Ionized impurity scattering model for Monte Carlo calculation," Proceeding of the International Workshop on
Computational Electronics, University of Leeds, pp. 231-235 (1993).
22.
N. Nintunze and M.A.
Osman, "Hole transport in warped band model of GaAs," Proceeding of the International Workshop on
Computational Electronics, University of Leeds, pp. 205-208 (1993).
23.
N. Nintunze and M.A.
Osman, "Monte Carlo modeling of dynamic screening effects on ultrafast
relaxation of photoexcited carriers in GaAs," Proceeding of the Third International Workshop on Computational
Electronics, Portland, Oregon, pp. 284-287, 1994
24.
M.A. Osman,
"Intervalley Diffusion in Diamond," Transactions Second International High Temperature Electronics
Conference, Charlotte, N. Carolina, Vol.
2, pp. 97- 102, June 1994.
25.
A.A. Osman, M.A. Osman,
and M. Imam, "Tanh Law MOSFET Model for High Temperature Circuit
Simulations," Transactions Second
International High Temperature Electronics Conference, Charlotte, N.
Carolina, Vol. 2, pp. 45 - 50, June
1994.
26.
C.T. Dikmen, N.S. Dogan,
& M.A. Osman, "Modeling & Characterization of AlGaAs/GaAs HBTs for
High Temperature Applications," Transactions
Second International High Temperature Electronics Conference, Charlotte, N.
Carolina, Vol. 2, pp. 51-56, June
1994.
27.
C.T. Dikmen, N.S. Dogan,
& M.A. Osman, "Hot-Carrier-Induced Degradation in LDD MOSFETs at High
Temperatures," Transactions Second
International High Temperature Electronics Conference, Charlotte, North
Carolina, Vol. 2, pp. 15-20, June
1994.
28.
C.T. Dikmen, N.S. Dogan,
& M.A. Osman, "High Temperature Behavior and Modeling of Integrated
Circuit Bipolar Junction Transistors," Transactions
Second International High Temperature Electronics Conference, Charlotte, N.
Carolina, Vol. 2, pp. 33-38, June
1994.
29.
C.T. Dikmen, N.S. Dogan,
& M.A. Osman, "Modeling & Characterization of Deep Submicron LDD
MOSFETs for Analog/Digital Applications at High Temperature," Transactions Second International High
Temperature Electronics Conference, Charlotte, North Carolina, Vol. 1, IV3-8, June 1994.
30.
J. Dewey and M.A. Osman,
"Majority Electron Mobility Calculations in Heavily Doped Silicon,"
to be published in the Proceeding of The
22nd International Conference on the Physics of Semiconductors, Vancouver,
Canada, August 1994.
31.
M. A.. Osman and A.A.
Osman, "Characterization and Modeling of Partially Depleted SOI MOSFETs up
to 300C," Proceedings of the Workshop on High Temperature Power
Electronics for Vehicles, Fort Monmouth, New Jersey, April 1995.
32.
A. A.. Osman and M,A.
Osman, "Temperature Dependent Modeling of Subthreshold Conduction in PD
SOI MOSFETs," Proceed. IEEE
International Caracas Conference Circuits and Systems, Caracas, Venezuela, Dec.
1995.
33.
M.A. Osman and N.
Nintunze, “Sub-Picosecond Luminescence Spectra of Photoexcited Electrons
Relaxation in p-GaAs,” Hot Carriers in
Semiconductors, K. Hess, J-P. Leburton, and U. Ravaioli, Editors, pp.
117-120, Plenum (1996).
34.
M. A. Osman and A.A.
Osman, "High Temperature SPICE Modeling of Partially Depleted SOI
MOSFETs," Proceeding of the 13th
Symposium on Space Nuclear Power and Propulsion, CONF 960109, M.S. El-Genk, ed.
American Institute of Physics, New York, AIP Conf. Proc. No. 361, 3: 1355-1358,
(1996).
35.
M. Imam, M.A. Osman, and
A.A. Osman, “ Modeling the Threshold Voltage of Long and Short Channel Fully
Depleted SOI MOSFETs with Back Gate Substrate Induced Surface Effects,”
Proceeding of the 21st International Conference on Microelectronics,
Nis, Yugoslavia, Sept. 1997.
36.
M.A. Osman, "Monte
Carlo Simulation of the Effects of X6
and X7 Intervalley Scattering on the Ultrafast Relaxation of Photoexcited
Carriers in GaAs," in Ultrafast
Phenomena in Semiconductors III,
K.T. Tsen & H.R. Fetterman, Editors, Proc. SPIE 3277(1998).
37.
M.A. Osman and Ashraf A.
Osman, "Self-heating as a Tool for measuring sub-0.1 micron
Silicon-on-Insulator device Parameters,"
in Ultrafast Phenomena in Semiconductors III, K.T. Tsen & H.R.
Fetterman, Editors, Proc. SPIE 3277 (1998).
38.
M.A. Osman and
Ashraf A. Osman, "Analysis of
Self-Heating Effects on Partially Depleted Silicon-on-Aluminum MOSFETs,"
Proceeding of 1998 High Temperature Electronics Conference.
39.
A.A. Osman and M.A.
Osman, "Investigation of High Temperature Effects on MOSFET Gate
Transconductance," Proceeding of 1998 High Temperature Electronics
Conference.
40.
M. Imam, M.A. Osman, and
A.A. Osman, “Short Channel SOI MOSFETs Threshold Voltage Modeling with
Induced Substrate Effects,”
in Proceedings of the Symposium on
Giga Scale Integration Technology, M.A. Osman & O. Awadalla, Editors
(1999)
41.
P.D. Pedrow, R.G.
Hogland, R. Mahalangam, and M.A. Osman, "Plasma Processing of
Electro-active Polymers and Devices," in Proceedings of the Symposium on Giga Scale Integration Technology,
M.A. Osman & O. Awadalla, Editors (1999).
42.
A.A. Osman and M.A.
Osman, "Self-heating Effects on the Gate Transconductance of SOI MOSFETs,”
in Proceedings of the Symposium on Giga
Scale Integration Technology, M.A. Osman & O. Awadalla, Editors (1999).
43.
M.A. Osman, “Monte Carlo
Simulation of the Ultrafast Relaxation of Electrons in AlN,” in Ultrafast Phenomena in Semiconductors IV, K.T. Tsen & Jin Joo Song, Editors, Proc.
SPIE (2000).
44.
M.A. Osman and D.
Srivastava, “Thermal Conductivity of Single Wall Carbon Nanotubes,” Proceeding
of the 5th International High Temperature Electronics Conference,
Albuquerque, New Mexico, June 2000.
45.
B. A. Biegel, M.A.
Osman, and Z. Yu, “Analysis of Aluminum Nitride SOI for High Temperature
Electronics,” Proceeding of the 5th International High Temperature Electronics Conference,
Albuquerque, New Mexico, June 2000.
46.
P. D. Pedrow, L. V.
Shepsis, R. Mahalingam and M. A. Osman, "Computer Controlled Pulsed PECVD
Reactor for Laboratory Scale Deposition of Plasma Polymerized Thin Films,"
Electroactive Polymers, Q. M. Zhang, T. Furukawa, Y. Bar-Cohen and J.
Scheinbeim, Editors, Symposium Proceedings of Materials Research Society, Vol.
600, pp.325-331, 2000.
47.
M.A. Osman, “Hot Phonon
Effects on the Ultrafast Relaxation of Photoexcited Electrons in AlN,” in Ultrafast
Phenomena in Semiconductors IV,
K.T. Tsen & Jin Joo Song, Editors, Proc. SPIE (2001).
48.
M.A. Osman, “Ultrafast
Relaxation of Highly Photoexcited Electrons in AlN,” in Ultrafast Phenomena
in Semiconductors VI, K.T. Tsen
& Jin Joo Song, Editors, Proc. SPIE Vol. 4643, 163-168 (2002).
e.
Unpublished Presentations: ( including published abstracts)
1.
M.A. Osman, U. Ravaioli,
and D.K. Ferry, "Monte Carlo simulation of ultrahigh speed Schottky
barrier diodes," presented at 1985 WOCSEMAD, San Francisco, California.
2.
M.A. Osman, U. Ravaioli,
and D.K. Ferry, "Monte Carlo simulation of electron-hole interaction
effects on the relaxation of hot photoexcited carriers in GaAs," presented
at the American Physical Society Meeting, Las Vegas, Nevada, March 1986.
3.
M.A. Osman and D.K.
Ferry, "Electron-hole interaction and high field transport in GaAs,"
presented at the American Physical Society Meeting, New York, New York, March
1987.
4.
D.K. Ferry, M.A. Osman,
and H.L. Grubin, "Carrier-Carrier Interaction In Semiconductor
Plasmas," presented at the 1987 IEEE International Conference on Plasma
Science, June 1987. (Invited).
5.
M.A. Osman and H.L.
Grubin, "Effect of carrier-carrier interaction on the intervalley transfer
rates in GaAs," presented at the American Physical Society Meeting, New
Orleans, Louisiana, March 1988.
6.
M.A. Osman, J.P.
Kreskovsky, & H.L. Grubin, " Monte Carlo simulation of Electron
transport in Diamond," presented at the Third Annual SDIO/IST - ONR:
Diamond Technology Initiative Symposium, Crystal City, Virginia, July 12- 14,
(1988).
7.
M.A. Osman and M.
Meyyapan, "Monte Carlo simulation of heterostructure bipolar
transistors," presented at NORTHCON meeting, Portland, Oregon (1989).
8.
M.A. Osman, M. Imam, and
N.S. Dogan, "Large Signal Modeling of GaAs MESFETs from small signal
S-parameter measurements," presented at NORTHCON meeting, Seattle,
Washington, October 1990.
9.
M.A. Osman, E. Schorn,
and N.S. Dogan, "Characterization of GaAs MESFETs by pulsed I-V
measurement system," presented at NORTHCON meeting, Seattle, Washington,
October 1990.
10.
M.A. Osman and J. Dewey,
"Electron Scattering by ionized impurities in silicon," presented at
the American Physical Society Meeting, Seattle, Washington, March 1993.
11.
J. Dewey and M.A. Osman,
"Effects of electron-hole scattering on minority electron transport in
silicon," presented at the American Physical Society Meeting, Seattle,
Washington, March 1993.
12.
N. Nintunze and M.A.
Osman, "Monte Carlo of Ultra fast relaxation of photoexcited electrons in
p-GaAs," presented at the American Physical Society Meeting, Seattle, Washington,
March 1993.
13.
M.A. Osman,
"Research on Device modeling at CDADIC: a Researcher's experience,"
Proceedings of the Symposium on University-Industry Interaction, UTM, Kuala
Lumpur, Malaysia, April 1993.
14.
M.A. Osman, “Monte Carlo
Simulation of NEA Field Emission Devices,” The Second NASA Device Modeling
Workshop, NASA Ames Research Center, Moffett Field, California, August 1997.
15. M.A. Osman and D. Srivastava, “Molecular Dynamics Simulation of the Thermal Conductivity of Carbon Nanotubes,” presented at the 46th International Symposium of the American Vacuum Society, Seattle, Washington, October 1999.
16.
M.A. Osman and Deepak
Srivastava, “Molecular Dynamic Simulations of Thermal conductivity of Carbon
nanaotubes,” presented at the American Physical Society March Meeting,
Minneapolis, Minnesota, March 2000.
17.
D. Srivastava and M.A. Osman, “Thermal
Conductivity of Single Wall nanotubes,” presented at NASA Johnson Research
Center, January 2000.
18. P. D. Pedrow, K. G. Lynn, R. Mahalingam, M. A. Osman and L. V. Shepsis, "Doping of Thin Plasma Polymerized Aniline Films, "Conference Record, IEEE International Conference on Plasma Science, June 4-7, 2000, New Orleans, Louisiana, p. 90.
19.
M.A. Osman, L. He, and
M. Imam “Temperature Dependence of the Floating Body Voltage in SOI MOSFETs,”
poster presentation at the International Conference on High Temperature
Electronics, HITEN 2001, June 5-8, 2001, Oslo, Norway.
20.
M.A. Osman and L. He,
“Simulation of the noise properties of Silicon-on-AlN MOSFETs,” poster
presentation at the International Conference on High Temperature Electronics
HITEN 2001, June 5-8, 2001, Oslo, Norway.
21.
P. D. Pedrow, P. A. Tamirisa, K. C. Liddell,
M. A. Osman and D. Chinn,
"Dielectric Breakdown in Plasma-polymerized Aniline Film, IEEE
International Conference on Plasma Science, June, 2002, Canada
22.
M.A. Osman and D.
Srivastava, “Heat Pulse Propagation in Carbon Nanotubes”, Conference on Computational Physics 2002, CA meeting of the
American Physical Society, August 25-28, San Diego, California.
23.
M.A. Osman and M.H. Sulieman, “Ultra-fast Relaxation of
carriers in AlN,” Conference on Computational Physics 2002, August 25-28, San
Diego, CA meeting of the American Physical Societ.
24.
A. Daghighi and M.A.
Osman, ‘Optimization of Body Contacts
in SOI MOSFETs,” Workshop on Microelectronics and Electron Devices, Boise,
Idaho October 25, 2002.
25.
M.H. Sulieman and M.A.
Osman, “Low Power and High Frequency SOI Voltage Controlled Oscillators,” Workshop
on Microelectronics and Electron Devices, Boise, Idaho October 25, 2002.
26.
M.A. Osman and M.H.
Sulieman, “Effect of LO-phonon-plasmon coupled modes on the Ultrafast
relaxation of electrons in AlN,” SPIE Conference on Ultrafast Phenomena in
Semiconductors VII, San Jose, California, January 2003.
27.
M.A. Osman, “Ultrafast
Relaxation of Electrons and holes in AlN,” SPIE Conference on Ultrafast
Phenomena in Semiconductors VII, San Jose, California, January 2003.
28.
M.A. Osman, A. Cummings,
D. Srivastava, “ Molecular Dynamic simulation of heat pulse propagation in
single wall carbon nanotubes,” Procedings of IEEE Nano 2003 Conference, San
Francisco, California, August 2003(CD version only).
Invited
Presentations & Seminars:
1. IBM Watson
Research Center, New York, May 1986.
2. Scientific
Research Associates, Glastonbury, Connecticut, May 1986.
3. SPIE
Conference on Ultrafast Lasers Probe
Phenomena in Bulk and Microstructure Semiconductors I, March 1987.
4. Department
of Electrical Engineering, University of Massachusetts, Amherst, April, 1987.
5. SPIE
Conference on Ultrafast Lasers Probe Phenomena
in Bulk and Microstructure Semiconductors II, March 1988.
6. Laboratory
of Laser Energetics, University of Rochester, September 1987.
7. Institute
for Ultrafast Spectroscopy and Lasers, City College of the CUNY, April 1988.
8. Department
of Electrical and Computer Engineering, WSU, March 1989.
9. Department
of Physics, Washington State University, Pullman, October 9, 1990.
10. Portable Products Division, Motorola, Fort
Lauderdale, December 1990.
11. Toshiba Research and Development Center, Kawasaki,
Japan, July 1991.
12. Faculty of Electrical Engineering, University
Technologi Malaysia, Kuala Lumpur, Malaysia, November 1991.
13. Fluke Manufacturing, Seattle, Washington, January
1992.
14. Boeing Military Electronics ASIC Division, Renton,
Washington, January 1992.
15. Department of Physics, University of Modena,
Modena, Italy, June 1992.
16. Department of Electronic Engineering, Osaka
University, Osaka, Japan, April 1993.
17. Boeing Electronics Center, Renton, Washington,
July 26, 1994.
18. NASA Lewis Research Center, Cleveland, Ohio July
1995.
19. Fluke Manufacturiung, Seattle, Washington, March
1997.
20. NASA Ames Research Center, Moffett Fiedl, July
1997.
29. “Noise Modeling and Characterization of SOI MOSFETs
for High Frequency Applications,” presented
at Honeywell Solid State Electronics Center, Plymouth, MN , April 27,2001.
30. “Self-Heating and Floating Body Effects in SOI
MOSFETs,” presented at the Department of Electrical Engineering, University of
Idaho, Moscow, November 9, 2001.
d. Research Reports:
1. M.A. Osman, J.P. Kreskovsky, and
H.L. Grubin, "Measurement of Speed of Electron devices", Final report
on Contract F4962087-C-0070, Air Force
Office of Scientific Research, March 1988.
2. M.A. Osman, G. Andrews, J.P.
Kreskovsky, and H.L. Grubin, "Numerical simulation studies of
semiconducting diamond electronics," Final report on Contract
DNA001-87-C-0250, Defense Nuclear Agency, Feb. 1989.
E, Workshops and Short courses:
·
“Device reliability:
silicon to Systems Considerations,” IEDM short course program, December 1992.
·
“Reliability and Manufacuring of ULSI
Devices,” National Alliance for Photonic Education, Austin, Texas, Oct. 1994
·
“Photovoltaic Technology
and System Design”, Siemens Solar Industries, Camarillo, California, May 13-17,
1996.
·
“Microfabrication
Laboratory Workshop”, Center for Electronic Materials and Devices, San Jose
State University, San Jose, California, Jan. 9-13, 1995.
·
“Biomedical
Microelectromechanical Systems,” SPIE short course, Seattle, Washington,
November 2nd, 1999.
f. Patent Disclosure:
·
A compact, Flexible
Automatic Pulsed I-V Measurement System, with E. Schorn (12/1990).
·
Area Efficient Body
contacts for SOI MOSFETs, August 2002.
Consulting in Areas of Professional
Expertise
• Encoder
Products Company, magnetics division, Fall 1991.
1.
Low Temperature
Characterization of SOI Devices and ICs,
AFRL, PI, 8/2003 – 7/2004, $55,000.
2.
Nanotube based
structures for high resolution control of thermal transport, NSF (in review).
Previous Support: (Recent at WSU)
13.
Reliable low power High
temperature integrated circuits development, Co-PI, Crane-ELDEC + Washington
Technology Center, 7/95 – 6/97, $130,000.
14.
Solid State Device
Animation Laboratory, NSF+WSU, PI, 6/96 – 5/98, $102,500.
15.
Support for Symposium on
Giga Scale Integration Technology, Motorola, $3,500, 7/98 – 12/98.
16.
Support for Symposium on
Giga Scale Integration Technology, Boeing, $2,000, 7/98 – 12/98.
17.
Support for Symposium on
Giga Scale Integration Technology, CDADIC, $600, 7/98 – 12/98.
18.
Support for Symposium on
Giga Scale Integration Technology, AHA, $300, 7/98 – 12/98.
19.
Low power, Fast SOI
MOSFET Electronics for Space Applications, NASA Ames Research Center,
8/99-7/2001, $49,100.
20.
Modeling and
Characterization of RF noise in SOI MOSFETs, CDADIC, PI, 8/2000 – 7/2001,
$50,000.
21.
“SiGe Circuit Design,”
Co-PI, NSF-Industry Center for Design of Analog-Digital Integrated
Circuits $55,000, 8/01/2001 – 7/31/2002
22.
Optoelectronics MSc
Specialization at WSU, NSF, Co-PI, 8/99 – 8/2002, $500,000
23.
Transport in Molecular
Structures, NASA Ames Research Center, PI, 1/2001 –12/2002, $127,000.
24.
“Noise and Performance
Optimization of RF SOI CMOS VCOs,” PI, NSF-Industry Center for Design of
Analog-Digital Integrated Circuits $95,000, 8/01/2001 – 7/31/2003
Supervision
of Students:
a.
Current Graduate
Students: (major advisor)
1.
Aron Cummings, MS..
2.
Arash Daghighi, Ph.D..
b.
Former Graduate
Students: (major advisor)
Student |
Degree |
Thesis/Dissertation
Titles |
Year |
N.
Nintunze |
Ph.D. |
Ensemble Monte Carlo Study
of Ultrafast Relaxation Phenomena in
Polar Semiconductors |
1990-
8/94 |
J.
Dewey |
M.S. |
Investigation of Minority
Electron Transport in Silicon |
1992-5/1993 |
M. Imam |
M.S. Ph.D. |
Buried p-layer MESFET
Characterization and Large Signal Modeling Modeling of submicron of
SOI and Bulk MOSFETs |
1990-
12/1991 1996
-2000 |
Z.
Md. Yusuf |
M.S. |
Monte Carlo Simulation of
Electron Transport in Diamond |
1991-12/1993 |
S. Tremaine |
M.S. |
GaAs Junction Field Effect
Transistor Characterization |
1992-5/1993 |
A.
Osman |
M.S. |
High Temperature Modeling
& Characterization of SOI MOSFETs |
1993-12/1994 |
Lisheng
He |
M.S. |
Non-thesis |
2001
-2002 |
Former
undergraduate students (technical assistants):
1.
Paul Katende (junior
EECS, NSBE member), multimedia project on African-American Inventors, 1/98
-5/98, supported by a grant from the college of Engineering, WSU.
2. Michael Hudgens, (junior MME, NSBE member), multimedia project on African American Inventors, 1/98 -5/98, supported by a grant from the college of Engineering, WSU.
3. Sarah Guske, NSF REU, Design of RF CMOS Voltage Controlled Oscillators, 9/2000 – 5/2001
4. Rebecca Powell, NSF REU, Design of RF CMOS Voltage Controlled Oscillators, 9/2000 – 5/2002
Personal: