Mohamed A. Osman

 

School of Electrical Engineering and Computer Science

Washington State University; Pullman, WA 99164-2752

osman@eecs.wsu.edu  /  (509) 335-2301  /  Fax: (509) 335-3818

 

Education:

 

BS          University of Khartoum, Physics (First Class Honors), 1977.

MS          University of Arizona, Physics, 1980.

MS          University of Massachusetts, Electrical & Computer Engineering, 1982.

                Thesis advisor:  Professor Ting-Wei Tang

PhD        Arizona State University, Applied Physics, 1986.

                Thesis advisor: Professor David K. Ferry

 

Professional Experience:

 

8/95-Present: Associate Professor: School of Electrical Engineering & Computer Science, Washington State University.

                          Analytical modeling SOI and bulk MOSFETs, noise and floating body, self-heating effects in SOI MOSFETs, RF SOI and CMOS circuits, High speed phenomena, Transport in semiconductors and Plasma polymerized electro-active polymers, Molecular dynamics simulations of thermal conduction in carbon nanotubes.

6/01 - 8/01        NASA Faculty Fellow: NASA Ames Research Center, Moffett Field, California. Molecular Dynamics Simulation of the thermal conductivity of carbon nanotubes and y-junction nanotubes.

7/98 - 8/99        NASA Faculty Fellow: NASA Ames Research Center, Moffett Field, California. Molecular Dynamics Simulation of the thermal conductivity of carbon nanotubes and graphite. Simulation and modeling of silicon-on-insulator MOSFETs, Di-nulei frequency in DNA and the tree of life.

6/97 - 8/97        NASA Visiting Summer Faculty: NASA Ames Research Center, Moffett Field, California. Monte Carlo Simulation of field emission devices, Molecular Dynamics Simulation of Carbon nanotubes & graphite.

6/95 - 8/95        NASA Summer Faculty Fellow: NASA Lewis Research Center, Cleveland, Ohio. Technical assessment of high temperature electronics requirements for hybrid electric vehicles.

8/89 - 7/95        Assistant Professor, School of Electrical Engineering & Computer Science, Washington State University. Has taught courses on semiconductor devices, microelectronics fabrication, semiconductor device modeling, optoelectronics, electromagnetics, digital design, and VLSI design. Research work on: minority and majority carrier transport in heavily doped silicon and GaAs, electron-electron scattering effects in silicon and GaAs, ultrafast phenomena in compound semiconductors, electron transport in diamond using Monte Carlo approach, quantum transport, high temperature modeling, characterization and reliability of HBT and silicon devices & ICs, large signal modeling of GaAs MESFETs.

5/93 - 6/93:  Visiting Scientist, Walter Schottky Institute, Technical University of Munich, Germany. Research on parallel device simulation algorithms using cellular automata..

9/86 - 8/89:   Research Scientist, Scientific Research Associates, Inc.; Glastonbury, Connecticut. Research on modeling of high speed solid state devices such as PHEMT, HBT, PBT, MESFET using drift and diffusion approach.  Monte Carlo simulation of transport in diamond, InGaAs, GaAs, and InP. Ultrafast optical and electronic phenomena in semiconductors.

8/84 - 8/86: Research Associate, Center for Solid State electronics Research; Arizona State University, Tempe, Arizona. Research on ultrafast relaxation in GaAs, device modeling, and quantum transport in quantum wells using Wigner formulation.

 

Service to Professional Groups/Associations

Organization / Chairperson of Professional Meetings:

 

·         Member NSF  SBIR/STTR Phase I, Carbon Nanotube Panel, April 2002.

·         Member Midwest Symposium Steering Committee

·         Member Program Committee: SPIE Conference on Ultrafast Phenomena in Semiconductors,  II – VII, , San Jose, California, January 2003

·         Member Program Committee: SPIE Conference on Ultrafast Phenomena in Semiconductors VI, San Jose, California, January 2002.

·         Member IEEE Electron Device Society Delegation to the Peoples Republic of China, 9/7 –9/20/2001.

·         Member Program Committee: SPIE Conference on Ultrafast Phenomena in Semiconductors V, San Jose, California, January 2001.

·         Member Program Committee: SPIE Conference on Ultrafast Phenomena in Semiconductors IV, San Jose, California, January 2000

·         Member Program Committee: SPIE Conference on Ultrafast Phenomena in Semiconductors III, San Jose, California,  January 1999

·         Member Program Committee: SPIE Conference on Ultrafast Phenomena in Semiconductors II, San Jose, California,  January 1998.

·         Member Organizing Committee: Society for Engineering Science 35th Annual Technical Meeting, Pullman, Washington, September 1998.

·         Chair Organizing Committee: Symposium on Giga Scale Integration Technology, Pullman, Washington, September 1998.

·         Member Organizing Committee: "Second International Symposium on Quantum Confinement: Physics & Applications",  185th Electrochemical Society Meeting, San Francisco, California, May  22-27, 1994.

·         Session Chair: "Second International Symposium on Quantum Confinement: Physics & Applications",  185th Electrochemical Society Meeting, San Francisco, California, May  22-27, 1994.

·         Member Advisory Board: Third International Conference on Computational Electronics, Portland, Oregon, May 18-20, 1994. 82 technical papers were presented at this meeting.

·         Session Chair, Third International Conference on Computational Electronics, Portland, Oregon, May 18-20, 1994.

·         Program Co-Chair:  Symposium on Industry/University Interaction, University Tecknologi Malaysia, Kuala Lumpur, Malaysia, April 27-28, 1993

 

Recognition:

·         NASA Group Achievement Award:  Ames IPT on Devices and Nanotechnology, 2000.

 

Membership in Professional Societies:

·         Senior member, Institute of Electrical and Electronic Engineering: Electron Device Society.

·         Chapter Chair:  IEEE ED/AP/SP/CAS Pullman-Moscow Joint Chapter

·         American Physical Society: Computational Physics Division, Forum on Education, Forum on International Physics

·         American Solar Energy Society

 

Review of Journal Articles & Proposals:

·         Journal of Applied Physics, Applied Physics letters, Physical Review B.

·         International Journal of Microelectronics, IEEE Trans. Electron Devices, Solid State Electronics

·         Semiconductor Science & Technology, Ozone Science and Engineering

·         NSF  & Cornell Center for Supercomputing

·         The United States Civilian Research and Development Foundation.

·         Battelle Northwest National Labs.

 

 

PUBLICATIONS

a. Books:

1.        "Quantum Confinement: Physics and Applications" ,M. Cahay, S. bandyopadhyay, J.P. Leburton, A.W. Kleinsasser, and M.A. Osman, editors, , Proc. Vol. 94-17, The Electrochemical Society, 1994.

2.       “Proceedings of the Symposium on Giga Scale Integration Technology,” M.A. Osman and O.O. Awadalla, editors, 1999.

b. Journal Articles:

1.        M.A. Osman, D.H. Navon, T.W. Tang, and L. Sha, "Improved Design of the Permeable Base Transistor,"  IEEE Transaction On Electron Devices , Vol. ED-30 , pp. 1348-1354 (1983).

2.        J.M. Cowley, M.A. Osman, and P. Humble, "Nanodiffraction from platelet defects in diamond,"  Ultramicroscopy ,  Vol. 15 , pp. 311-318 (1984).

3.        K. Hwang, D.H. Navon, T-W.Tang, and M.A. Osman, "Improved Convergence of Iterative numerical device simulation algorithms,"  IEEE Transaction On Electron Devices , Vol. ED-32 , pp. 1143-1145 (1985).

4.        U. Ravaioli, M.A. Osman, W. Potz, N. Kluksdhal, and D.K. Ferry, "Investigation of Ballistic Transport through resonant tunneling quantum wells using Wigner function approach,"  Physica ,  Vol. 134b, pp. 36-40 (1985).

5.        U. Ravaioli, P. Lugli, M.A. Osman, D.K. Ferry, "Advantages of collocation methods over finite differences in one dimensional Monte Carlo simulations of submicron devices,"  IEEE Transaction On Electron Devices , Vol. ED-32 , pp. 2097-2101 (1985).   

6.        M.A. Osman and D.K. Ferry, "Monte Carlo Investigation of the electron-hole Interaction effects on the Ultrafast relaxation of hot photoexcited carriers in GaAs," Physical Review B,  Vol. 36 , pp. 6018-6032 (1987). 

7.        M.A. Osman and D.K. Ferry, "Electron-hole interaction and high field transport of photoexcited carriers in GaAs,"  Journal of Applied Physics, Vol. 61,  pp. 5330-5336 (1987).

8.        M.A. Osman and H.L. Grubin, "Monte Carlo Investigation of Minority Electron Transport in InGaAs,"  Applied Physics Letters,  Vol. 51 , pp. 1812-1814 (1987).

9.        D.K. Ferry, M.A. Osman, R. Joshi, and M.J. Kann," Ultrafast relaxation of hot photoexcited carriers in GaAs,"  Solid State Electronics ,  Vol. 31, pp. 401-406 (1988).

10.     W. Potz and M.A. Osman, "Hot phonons revisited," Solid State Electronics , Vol. 31, pp. 309-312 (1988).

11.     M.A. Osman and H.L. Grubin, "Carrier-carrier interaction and intervalley transfer effects on ultrafast relaxation of photoexcited electrons in GaAs," Solid State Electronics , Vol. 31, pp. 471-474 (1988). 

12.     M.A. Osman and H.L. Grubin, "Effect of carrier-carrier interaction on intervalley transfer rates of photoexcited carriers in GaAs,"  Physical Review B ,  Vol. 39, pp. 10969-10972 (1989). 

13.     M.A. Osman and H.L. Grubin, "Electron Velocity Overshoot and Valley repopulation effects in diamond,"  Applied Physics Letters , Vol. 54 , pp. 1902-1904 (1989). 

14.     M.A. Osman, M. Cahay, and H.L. Grubin, "Effect of Valence Band Anisotropy on the Ultrafast relaxation of Electrons in GaAs", Solid State Electronics , Vol. 32, pp. 1911-1914 (1989).

15.     M. Cahay, S. Bandyopadhary, M.A. Osman, and H.L. Grubin, "Influence of Evanescent States on Quantum Transport Through an Array of Elastic Scatterers,"  Surface Science ,  Vol. 228 , pp. 301-305, 1990. 

16.     M.A. Osman, "Minority Electron Transport across p+ doped Submicron Layers of GaAs," Journal of Applied Physics, Vol. 71, pp. 308-313, 1992. 

17.     M. Imam, M.A. Osman, and Y. Prieto, "A large Signal GaAs MESFET Model for Nonlinear Circuit Simulation," IEEE Microwave and Guided Wave Letters,  Vol. 2, 135 (1992).

18.     M.A. Osman, N. Nintunze, and M. Imam, "Carrier-carrier interaction effects on Transient Valley Population and Velocity in Silicon," Semiconductor Science and Technology,  Vol. 7, 340 (1992).

19.     M.A. Osman, "High Temperature Transport of Electrons in Diamond," Physica B, Vol. 185, 471 (1993).

20.     M. Imam & M.A. Osman, "Autocorrelation Function of Velocity Fluctuations and Noise in Diamond," Diamond Films & Technology   Vol. 2, 15 (1993).

21.     M. Imam & M.A. Osman, "Modeling Threshold Voltage of Short-Channel SOI MOSFETs," Electronic Letters  Vol. 29, 474 (1993).

22.     J. Dewey & M.A. Osman, "Monte Carlo Investigation of Minority Electron Transport in Silicon", Applied Phys. Lett. , Vol. 62, 182 (1993).

23.     J. Dewey & M.A. Osman, "Monte Carlo Study of Hole Transport in Silicon," J. Appl. Physics Vol. 74, 3219 (1993).

24.     J. Dewey & M.A. Osman, "Electron-hole scattering effects on Transient Transport in Silicon,” Semiconductor Science & Technology  , Vol. 9, 482 (1994).

25.     N. Nintunze & M.A. Osman, "Dynamically screened electron-hole scattering effects on ultrafast thermalization of photoexcited carriers in p+ GaAs," Semiconductor Science & Technology , Vol. 9, 485 (1994).

26.     N. Nintunze & M.A. Osman, "Ultrafast relaxation of highly photoexcited carriers in p-doped and intrinsic GaAs," Phys. Rev. B , Vol. 50, pp 10706-10714 (1994).

27.     C.T. Dikmen, N.S. Dogan, & M.A. Osman, "Modeling and Characterization of HBT for High Temperature Applications," IEEE Journal of Solid State Circuits,  Vol. 29, 108 (1994).

28.     C.T. Dikmen, N.S. Dogan, A. Bhattacharyya & M.A. Osman, "Hot Carrier Induced Degradation in LDD-MOSFETs at High Temperatures," Solid  State Electronics ,  Vol. 38,  December 1994.

29.     A.A. Osman, M.A. Osman, N.S. Dogan, and M.A. Imam, "Extended Tanh Law MOSFET Model for High Temperature Circuit Simulation," IEEE Journal of Solid State Circuits , Vol. 30, 108-11, February 1995.

30.     A.A. Osman, M.A. Osman, N.S. Dogan, and M. Imam, "Zero Temperature Coefficient Bias Points of Partially-Depleted SOI MOSFETS,"  IEEE Trans. Electron Devices, Vol. 42, Sept. 1995.

31.     N. Nintunze and M.A. Osman, "Hole Drift Velocity in Warped Band Model of GaAs," Semiconductor Science & Technology  , Vol. 10, 11-17 (1995).

32.     R. Rodrigues, M. Sailor, P. Buchberger, R.A. Hopfel, N. Nintunze, and M.A. Osman, "Ultrafast energy loss of electrons in p-GaAs,"  Applied Physics Letters, Vol. 67, (July 1995).

33.     M.A. Imam, M.A. Osman, and A.A. Osman, "MOSFET Global Modeling for Deep Submicron Devices with a Modified BSIM1 Spice Model," IEEE Trans. Computer Aided Design, vol. 15, pp. 446-451, 1996.

34.     P.D. Pedrow, K. Goyal, R. Mahalingam, and M.A. Osman, “Explosion model applied to an intense pulsed plasma source for thin film deposition,” IEEE Trans. on Plasma Science, vol. 25, pp. 89-96, 1997.

35.     M.A. Imam, M.A. Osman, and A.A. Osman, “Threshold Voltage Model for deep-Submicron Fully Depleted SOI MOSFETs with Back gate Substrate Induced Surface Potential Effects,” Journal of Microelectronics Reliability, vol.39  , pp. 487-495 , 1999.

36.     M.A. Imam, H. Fu, M.A. Osman, and A.A. Osman,”A simple method to determine the floating body voltage of SOI CMOS devices,” IEEE Electron Dev. Lett., Vol. 21, pp. 21-23, 2000.

37.     L.V. Shepsis, P.D. Pedrow, R. Mahalingham, and M.A. Osman, “Modeling and Measurement of Monomer Pressure Evolution in Inductively Coupled Pulsed Plasma Reactor for Thin Polymer Films,” IEEE Trans. On Plasma Science, Vol. 28, pp. 2172-2178  (2000).

38.     M.A. Imam, M.A. Osman, and A.A. Osman, ”Determination and assessment of the floating body voltage of SOI CMOS devices,” IEEE Trans. Electron Dev.,Vol. 48,  pp. 688-695, 2001..

39.     M.A. Osman and Deepak Srivastava, “Temperature Dependence of Thermal Conductivity of Single Wall Carbon Nanotubes,” Nanotechnology,  Vol. 12 No 1, 21-24,  2001.

40.     K.O. Goyal, R. Mahalingam, P.D. Pedrow and M. A. Osman,"Mass Transport Characteristics in a Pulsed Plasma Enhanced Chemical Vapor Deposition Reactor for Thin Polymer Film Deposition," IEEE Transactions on Plasma Science, Vol. 29, No. 1, February 2001.

41.     L.V. Shepsis, P.D. Pedrow, R. Mahalingham, and M.A. Osman, “Modeling and Experimental Comparison of Pulsed Plasma Deposition of Aniline,” Thin Solid Films Vol. 385, pp. 11-21, 2001.

42.     M.A. Imam, M.A. Osman, and A.A. Osman, “ Simulation of partially and near-fully depleted SOI MOSFET Devices and Circuits using SPICE compatible Physical sub-circuit model,” IEEE Trans. Solid State Circuits (in review).

43.     M.A. Osman and Deepak Srivastava, “Chiralty dependence of Heat pulse propagation in single wall carbon nanotubes,”  to be submitted to Applied Physics Letters

44.     M.A. Osman, “Ultrafst Relaxation of Photo-excited electrons in Aluminum Nitride,” Semiconductor Science and Technology (in review).

 

d. Conference Papers:

 

1.        M.A. Osman, U. Ravaioli, and D.K. Ferry, "Monte Carlo simulation of Hot Carriers generated by subpicosecond Laser Pulses in Schottky Barrier Diodes, "Picosecond Electronics and Optoelectronics , G.A. Mourou, D.M. Bloom, and C.H. Lee, Editors, Springer, Berlin (1985).

2.        M.A. Osman, U. Ravaioli, and D.K. Ferry, "Monte Carlo Investigation of High Speed GaAs Schottky Barrier Photodiode,"  High Speed Electronics , B. Kallbak, Editor, pp. 136-139, Springer, Heidelberg (1986). 

3.        H.L. Grubin, M.A. Osman, and J.P. Kreskovsky, "Ultrashort Transients in Semiconductors," Ultrafast Lasers Probe Phenomena in Bulk and Microstructure Semiconductors I, edited by R.R. Alfano, Proc. SPIE 793, pp. 78-86, 1987. (Invited paper).

4.        M.A. Osman, H.L. Grubin, J.P. Kreskovsky, and D.K. Ferry, "Monte Carlo Investigation of Carrier-Carrier Interaction and Ultrafast Cooling of Hot Photoexcited Carriers in GaAs," Ultrafast Lasers Probe Phenomena in Bulk and Microstructure Semiconductors I, edited by R.R. Alfano, Proc. SPIE 793, pp. 78-86, 1987. (Invited paper).

5.        M.A. Osman and H.L. Grubin, "Electron-Hole Interaction In GaAs," Ultrafast Lasers Probe Phenomena in Bulk and Microstructure Semiconductors II, edited by R.R. Alfano, Proc. SPIE 942, pp. 18-29, 1988. (Invited paper).

6.        M. Cahay, M.A. Osman, H.L. Grubin, and M. Mclennan, "Space Charge Effects in the compositional and effective mass superlattices", Nanostructure Physics and Fabrication , M.A. Reed and W.P. Kirk, Editors, pp. 495-499, Academic Press, San Diego (1989).

7.        M.A. Osman and M. Cahay, "Effect of hot phonons on the on the ultrafast relaxation of photoexcited holes in semiconductors,"  Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III , R.R. Alfano, Editor, published by SPIE, Bellingham, Washington; 22-28 (1990).  

8.        MA. Osman and N. Nintunze, "Momentum reorientation of photoexcited carriers in GaAs," in Ultrafast Phenomena in  Semiconductors, D.K. Ferry & H.M. van Driel, Editors, Proc. SPIE 2142, pp. 270-277, 1994.

9.        N. Nintunze and M.A. Osman, "Femtosecond Relaxation of highly photoexcited carriers in GaAs,"  in Ultrafast Phenomena in  Semiconductors, D.K. Ferry & H.M. van Driel, Editors, Proc. SPIE 2142, pp. 286-293, 1994.

10.     T. Singh, G. Qian, M. Cahay, and M.A. Osman, "Spatial Distribution of Current and Fermi Levels in Electron Wave Directional Couplers," in "Quantum Confinement: Physics and Applications", M. Cahay, S. Bandyopadhyay, J.P. Leburton, A.W. Kleinsasser, and M.A. Osman, Editors, Proc. Vol. 94-17, pp. 104-116, The Electrochemical Society, 1994.

11.     Kumar, M. Cahay, S. Shi, K. Roenker, W.E. Stanchina, and M.A. Osman, "Tunneling Time through Emitter-base Junctions in Heterojunction Bipolar Transistors," in "Quantum Confinement: Physics and Applications"  , M. Cahay, S. Bandyopadhyay, J.P. Leburton, A.W. Kleinsasser, and M.A. Osman, Editors, Proc. Vol. 94-17, pp. 341-353, The Electrochemical Society, 1994.

12.     M.A. Osman, U. Ravaioli, R. Joshi, W. Potz, and D.K. Ferry, "Monte Carlo Simulation of the Electron-hole Interaction Effects On the Relaxation of Hot Photoexcited Carriers,"  Proceedings of the 18th International Conference on the Physics of Semiconductors , O. Engstrom, Editor, pp. 1311- World Scientific, Singapore (1987).

13.     M.A. Osman and H.L. Grubin , "Minority Electron Transport in InP", First International Conference on InP and Related Materials for Advanced Electronic and Optical Devices , R. Singh, L.J. Messick, Editors, Proc. SPIE 1144, 626 (1989).

14.     M. Meyyappan, M.A. Osman, G. Andrews, "Physics of InP/InGaAs Heterostructure Bipolar transistors for EHF applications", First International Conference on InP and Related Materials for Advanced Electronic and Optical Devices , R. Singh, L.J. Messick, Editors, Proc. SPIE 1144, 602 (1989).

15.     N.S. Dogan, M. WU, M.A. Osman, and R.G. Olsen, "Modeling of propagation and cross-talk in interconnects using SPICE," Proceedings of the 33rd Midwest Symposium on Circuits and Systems, Calgary, Canada, August 1990. 

16.     M.A. Osman, M. Imam, and N. Nintunze, "Diffusion coefficient of electrons in Diamond," Applications of Diamond Films and Related Materials, Y. Tzeng, M. Yoshikawa, editors, Elsevier, NewYork, pp. 611-614 (1991).

17.     M.A. Osman and N.S. Dogan, "Minority Electron Transport Across Submicron layers of GaAs and InP'",  Computational Electronics: Semiconductor Transport and Device Simulation, K. Hess, J.P. Leburton, and U. Ravaioli, editors, Kluwer Academic Publishers, Boston, 107-110 (1991).  

18.     M.A. Osman, "Electron-electron interaction effects on transient transport in silicon", Proceeding of the International Workshop on Computational Electronics, pp. 217-220 (1992). 

19.     J. Dewey and M.A. Osman, "Monte Carlo Investigation of Minority electron transport in Silicon," Proceeding of the International Workshop on Computational Electronics, pp. 225-228 (1992). 

20.     J. Dewey and M.A. Osman, "Electron-hole scattering effects in Silicon," Proceeding of the International Workshop on Computational Electronics, University of Leeds,pp. 200-204 (1993). 

21.     J. Dewey and M.A. Osman, "Ionized impurity scattering model for Monte Carlo calculation," Proceeding of the International Workshop on Computational Electronics, University of Leeds, pp. 231-235 (1993). 

22.     N. Nintunze and M.A. Osman, "Hole transport in warped band model of GaAs," Proceeding of the International Workshop on Computational Electronics, University of Leeds, pp. 205-208 (1993). 

23.     N. Nintunze and M.A. Osman, "Monte Carlo modeling of dynamic screening effects on ultrafast relaxation of photoexcited carriers in GaAs," Proceeding of the Third International Workshop on Computational Electronics, Portland, Oregon, pp. 284-287, 1994

24.     M.A. Osman, "Intervalley Diffusion in Diamond," Transactions Second International High Temperature Electronics Conference, Charlotte, N. Carolina, Vol. 2, pp. 97- 102, June 1994.

25.     A.A. Osman, M.A. Osman, and M. Imam, "Tanh Law MOSFET Model for High Temperature Circuit Simulations," Transactions Second International High Temperature Electronics Conference, Charlotte, N. Carolina, Vol. 2, pp. 45 - 50, June 1994.

26.     C.T. Dikmen, N.S. Dogan, & M.A. Osman, "Modeling & Characterization of AlGaAs/GaAs HBTs for High Temperature Applications," Transactions Second International High Temperature Electronics Conference, Charlotte, N. Carolina, Vol. 2, pp. 51-56, June 1994.

27.     C.T. Dikmen, N.S. Dogan, & M.A. Osman, "Hot-Carrier-Induced Degradation in LDD MOSFETs at High Temperatures," Transactions Second International High Temperature Electronics Conference, Charlotte, North Carolina, Vol. 2, pp. 15-20, June 1994.

28.     C.T. Dikmen, N.S. Dogan, & M.A. Osman, "High Temperature Behavior and Modeling of Integrated Circuit Bipolar Junction Transistors," Transactions Second International High Temperature Electronics Conference, Charlotte, N. Carolina, Vol. 2, pp. 33-38, June 1994.

29.     C.T. Dikmen, N.S. Dogan, & M.A. Osman, "Modeling & Characterization of Deep Submicron LDD MOSFETs for Analog/Digital Applications at High Temperature," Transactions Second International High Temperature Electronics Conference, Charlotte, North Carolina, Vol. 1, IV3-8, June 1994.

30.     J. Dewey and M.A. Osman, "Majority Electron Mobility Calculations in Heavily Doped Silicon," to be published in the Proceeding of The 22nd International Conference on the Physics of Semiconductors, Vancouver, Canada, August 1994.

31.     M. A.. Osman and A.A. Osman, "Characterization and Modeling of Partially Depleted SOI MOSFETs up to 300C," Proceedings of the Workshop on High Temperature Power Electronics for Vehicles, Fort Monmouth, New Jersey, April 1995.

32.     A. A.. Osman and M,A. Osman, "Temperature Dependent Modeling of Subthreshold Conduction in PD SOI MOSFETs," Proceed.  IEEE International Caracas Conference Circuits and Systems, Caracas, Venezuela, Dec. 1995.

33.     M.A. Osman and N. Nintunze, “Sub-Picosecond Luminescence Spectra of Photoexcited Electrons Relaxation in p-GaAs,” Hot Carriers in Semiconductors, K. Hess, J-P. Leburton, and U. Ravaioli, Editors, pp. 117-120, Plenum (1996).

34.     M. A. Osman and A.A. Osman, "High Temperature SPICE Modeling of Partially Depleted SOI MOSFETs,"  Proceeding of the 13th Symposium on Space Nuclear Power and Propulsion, CONF 960109, M.S. El-Genk, ed. American Institute of Physics, New York, AIP Conf. Proc. No. 361, 3: 1355-1358, (1996).

35.     M. Imam, M.A. Osman, and A.A. Osman, “ Modeling the Threshold Voltage of Long and Short Channel Fully Depleted SOI MOSFETs with Back Gate Substrate Induced Surface Effects,” Proceeding of the 21st International Conference on Microelectronics, Nis, Yugoslavia, Sept. 1997.

36.     M.A. Osman, "Monte Carlo Simulation of the Effects of  X6 and X7 Intervalley Scattering on the Ultrafast Relaxation of Photoexcited Carriers in GaAs," in Ultrafast Phenomena in  Semiconductors III, K.T. Tsen & H.R. Fetterman, Editors, Proc. SPIE 3277(1998).

37.     M.A. Osman and Ashraf A. Osman, "Self-heating as a Tool for measuring sub-0.1 micron Silicon-on-Insulator device Parameters,"  in Ultrafast Phenomena in  Semiconductors III, K.T. Tsen & H.R. Fetterman, Editors, Proc. SPIE 3277 (1998).

38.     M.A. Osman and Ashraf  A. Osman, "Analysis of Self-Heating Effects on Partially Depleted Silicon-on-Aluminum MOSFETs," Proceeding of 1998 High Temperature Electronics Conference.

39.     A.A. Osman and M.A. Osman, "Investigation of High Temperature Effects on MOSFET Gate Transconductance," Proceeding of 1998 High Temperature Electronics Conference.

40.     M. Imam, M.A. Osman, and A.A. Osman, “Short Channel SOI MOSFETs Threshold Voltage Modeling with Induced  Substrate  Effects,”  in Proceedings of the Symposium on Giga Scale Integration Technology, M.A. Osman & O. Awadalla, Editors (1999)

41.     P.D. Pedrow, R.G. Hogland, R. Mahalangam, and M.A. Osman, "Plasma Processing of Electro-active Polymers and Devices," in Proceedings of the Symposium on Giga Scale Integration Technology, M.A. Osman & O. Awadalla, Editors (1999).

42.     A.A. Osman and M.A. Osman, "Self-heating Effects on the Gate Transconductance of SOI MOSFETs,” in Proceedings of the Symposium on Giga Scale Integration Technology, M.A. Osman & O. Awadalla, Editors (1999).

43.     M.A. Osman, “Monte Carlo Simulation of the Ultrafast Relaxation of Electrons in AlN,” in Ultrafast Phenomena in  Semiconductors IV,  K.T. Tsen & Jin Joo Song, Editors, Proc. SPIE (2000).

44.     M.A. Osman and D. Srivastava, “Thermal Conductivity of Single Wall Carbon Nanotubes,” Proceeding of the 5th International High Temperature Electronics Conference, Albuquerque, New Mexico, June 2000.

45.     B. A. Biegel, M.A. Osman, and Z. Yu, “Analysis of Aluminum Nitride SOI for High Temperature Electronics,” Proceeding of the 5th International  High Temperature Electronics Conference, Albuquerque, New Mexico, June 2000.

46.     P. D. Pedrow, L. V. Shepsis, R. Mahalingam and M. A. Osman, "Computer Controlled Pulsed PECVD Reactor for Laboratory Scale Deposition of Plasma Polymerized Thin Films," Electroactive Polymers, Q. M. Zhang, T. Furukawa, Y. Bar-Cohen and J. Scheinbeim, Editors, Symposium Proceedings of Materials Research Society, Vol. 600,  pp.325-331, 2000.

47.     M.A. Osman, “Hot Phonon Effects on the Ultrafast Relaxation of Photoexcited Electrons in AlN,” in Ultrafast Phenomena in Semiconductors IV,  K.T. Tsen & Jin Joo Song, Editors, Proc. SPIE (2001).

48.     M.A. Osman, “Ultrafast Relaxation of Highly Photoexcited Electrons in AlN,” in Ultrafast Phenomena in Semiconductors VI,  K.T. Tsen & Jin Joo Song, Editors, Proc. SPIE Vol. 4643,  163-168 (2002).

 

e. Unpublished Presentations: ( including published abstracts)

1.        M.A. Osman, U. Ravaioli, and D.K. Ferry, "Monte Carlo simulation of ultrahigh speed Schottky barrier diodes," presented at 1985 WOCSEMAD, San Francisco, California.

2.        M.A. Osman, U. Ravaioli, and D.K. Ferry, "Monte Carlo simulation of electron-hole interaction effects on the relaxation of hot photoexcited carriers in GaAs," presented at the American Physical Society Meeting, Las Vegas, Nevada, March 1986. 

3.        M.A. Osman and D.K. Ferry, "Electron-hole interaction and high field transport in GaAs," presented at the American Physical Society Meeting, New York, New York, March 1987. 

4.        D.K. Ferry, M.A. Osman, and H.L. Grubin, "Carrier-Carrier Interaction In Semiconductor Plasmas," presented at the 1987 IEEE International Conference on Plasma Science, June 1987. (Invited).

5.        M.A. Osman and H.L. Grubin, "Effect of carrier-carrier interaction on the intervalley transfer rates in GaAs," presented at the American Physical Society Meeting, New Orleans, Louisiana, March 1988. 

6.        M.A. Osman, J.P. Kreskovsky, & H.L. Grubin, " Monte Carlo simulation of Electron transport in Diamond," presented at the Third Annual SDIO/IST - ONR: Diamond Technology Initiative Symposium, Crystal City, Virginia, July 12- 14, (1988). 

7.        M.A. Osman and M. Meyyapan, "Monte Carlo simulation of heterostructure bipolar transistors," presented at NORTHCON meeting, Portland, Oregon (1989). 

8.        M.A. Osman, M. Imam, and N.S. Dogan, "Large Signal Modeling of GaAs MESFETs from small signal S-parameter measurements," presented at NORTHCON meeting, Seattle, Washington, October 1990. 

9.        M.A. Osman, E. Schorn, and N.S. Dogan, "Characterization of GaAs MESFETs by pulsed I-V measurement system," presented at NORTHCON meeting, Seattle, Washington, October 1990.

10.     M.A. Osman and J. Dewey, "Electron Scattering by ionized impurities in silicon," presented at the American Physical Society Meeting, Seattle, Washington, March 1993.

11.     J. Dewey and M.A. Osman, "Effects of electron-hole scattering on minority electron transport in silicon," presented at the American Physical Society Meeting, Seattle, Washington, March 1993.

12.     N. Nintunze and M.A. Osman, "Monte Carlo of Ultra fast relaxation of photoexcited electrons in p-GaAs," presented at the American Physical Society Meeting, Seattle, Washington, March 1993.

13.     M.A. Osman, "Research on Device modeling at CDADIC: a Researcher's experience," Proceedings of the Symposium on University-Industry Interaction, UTM, Kuala Lumpur, Malaysia, April 1993.

14.     M.A. Osman, “Monte Carlo Simulation of NEA Field Emission Devices,” The Second NASA Device Modeling Workshop, NASA Ames Research Center, Moffett Field, California, August 1997.

15.  M.A. Osman and D. Srivastava, “Molecular Dynamics Simulation of the Thermal Conductivity of Carbon Nanotubes,” presented at the 46th International Symposium of the American Vacuum Society, Seattle, Washington, October 1999.

16.     M.A. Osman and Deepak Srivastava, “Molecular Dynamic Simulations of Thermal conductivity of Carbon nanaotubes,” presented at the American Physical Society March Meeting, Minneapolis, Minnesota, March 2000.

17.     D.  Srivastava and M.A. Osman, “Thermal Conductivity of Single Wall nanotubes,” presented at NASA Johnson Research Center, January 2000.

18.  P. D. Pedrow, K. G. Lynn, R. Mahalingam, M. A. Osman and L. V. Shepsis, "Doping of Thin Plasma Polymerized Aniline Films, "Conference Record, IEEE International Conference on Plasma Science, June 4-7, 2000, New Orleans, Louisiana, p. 90.

19.     M.A. Osman, L. He, and M. Imam “Temperature Dependence of the Floating Body Voltage in SOI MOSFETs,” poster presentation at the International Conference on High Temperature Electronics, HITEN 2001, June 5-8, 2001, Oslo, Norway.

20.     M.A. Osman and L. He, “Simulation of the noise properties of Silicon-on-AlN MOSFETs,” poster presentation at the International Conference on High Temperature Electronics HITEN 2001, June 5-8, 2001, Oslo, Norway.

21.      P. D. Pedrow, P. A. Tamirisa, K. C. Liddell, M. A. Osman and D. Chinn, "Dielectric Breakdown in Plasma-polymerized Aniline Film, IEEE International Conference on Plasma Science, June, 2002, Canada

22.     M.A. Osman and D. Srivastava, “Heat Pulse Propagation in Carbon Nanotubes”, Conference on Computational Physics 2002, CA meeting of the American Physical Society, August 25-28, San Diego, California.

23.     M.A. Osman and  M.H. Sulieman, “Ultra-fast Relaxation of carriers in AlN,” Conference on Computational Physics 2002, August 25-28, San Diego, CA meeting of the American Physical Society

 

Upcoming Conference Prestantaions

 

  1. A. Daghighi and M.A. Osman,  ‘Optimization of Body Contacts in SOI MOSFETs,” Workshop on Microelectronics and Electron Devices, Boise, Idaho October 25, 2002.
  2. M.H. Sulieman and M.A. Osman, “Low Power and High Frequency SOI Voltage Controlled Oscillators,” Workshop on Microelectronics and Electron Devices, Boise, Idaho October 25, 2002.
  3. M.H. Sulieman and M.A. Osman, “Effect of LO-phonon-plasmon coupled modes on the Ultrafast relaxation of electrons in AlN,” SPIE Conference on Ultrafast Phenomena in Semiconductors VII, San Jose, California, January 2003.
  4. M.A. Osman, “Ultrafast Relaxation of Electrons and holes in AlN,” SPIE Conference on Ultrafast Phenomena in Semiconductors VII, San Jose, California, January 2003.

 

Invited Presentations & Seminars:

 

1.  IBM Watson Research Center, New York, May 1986.

2.  Scientific Research Associates, Glastonbury, Connecticut, May 1986.

3.  SPIE Conference on  Ultrafast Lasers Probe Phenomena in Bulk and Microstructure Semiconductors I, March 1987.

4.  Department of Electrical Engineering, University of Massachusetts, Amherst, April, 1987.

5.  SPIE Conference on  Ultrafast Lasers Probe Phenomena in Bulk and Microstructure Semiconductors II, March 1988.

6.  Laboratory of Laser Energetics, University of Rochester, September 1987.

7.  Institute for Ultrafast Spectroscopy and Lasers, City College of the CUNY, April 1988.

8.  Department of Electrical and Computer Engineering, WSU, March 1989.

9.  Department of Physics, Washington State University, Pullman, October 9, 1990.

10. Portable Products Division, Motorola, Fort Lauderdale, December 1990.

11. Toshiba Research and Development Center, Kawasaki, Japan, July 1991.

12. Faculty of Electrical Engineering, University Technologi Malaysia, Kuala Lumpur, Malaysia, November 1991.

13. Fluke Manufacturing, Seattle, Washington, January 1992.

14. Boeing Military Electronics ASIC Division, Renton, Washington, January 1992.

15. Department of Physics, University of Modena, Modena, Italy, June 1992.

16. Department of Electronic Engineering, Osaka University, Osaka, Japan, April 1993.

17. Boeing Electronics Center, Renton, Washington, July 26, 1994.

18. NASA Lewis Research Center, Cleveland, Ohio July 1995.

19. Fluke Manufacturiung, Seattle, Washington, March 1997.

20. NASA Ames Research Center, Moffett Fiedl, July 1997.

24.     “Noise Modeling and Characterization of SOI MOSFETs for High Frequency Applications,”   presented at Honeywell Solid State Electronics Center, Plymouth, MN , April 27,2001.

25.     “Self-Heating and Floating Body Effects in SOI MOSFETs,” presented at the Department of Electrical Engineering, University of Idaho, Moscow, November 9, 2001.

 

d. Research Reports:

1. M.A. Osman, J.P. Kreskovsky, and H.L. Grubin, "Measurement of Speed of Electron devices", Final report on Contract  F49620­87-C-0070, Air Force Office of Scientific Research, March 1988.

2. M.A. Osman, G. Andrews, J.P. Kreskovsky, and H.L. Grubin, "Numerical simulation studies of semiconducting diamond electronics," Final report on Contract DNA001-87-C-0250, Defense Nuclear Agency, Feb. 1989.

 

E, Workshops and Short courses:

·         “Device reliability: silicon to Systems Considerations,” IEDM short course program, December 1992.

·          “Reliability and Manufacuring of ULSI Devices,” National Alliance for Photonic Education, Austin, Texas, Oct. 1994

·         “Photovoltaic Technology and System Design”, Siemens Solar Industries, Camarillo, California, May 13-17, 1996.

·         “Microfabrication Laboratory Workshop”, Center for Electronic Materials and Devices, San Jose State University, San Jose, California, Jan. 9-13, 1995.

·         “Biomedical Microelectromechanical Systems,” SPIE short course, Seattle, Washington, November 2nd, 1999.

 

f. Patent Disclosure:

·         A compact, Flexible Automatic Pulsed I-V Measurement System, with E. Schorn (12/1990).

·         Area Efficient Body contacts for SOI MOSFETs, August 2002.

 

Consulting in Areas of Professional Expertise

•       Encoder Products Company, magnetics division, Fall 1991.